@inproceedings{P111.251, author={Srivastava, P and Oprins, H and Van Hove, M and Das, J and Malinowski, PE and Bakeroot, Benoit and Marcon, D and Visalli, D and Kang, X and Lenci, S and Geens, K and Viaene, J and Cheng, K and Leys, M and De Wolf, I and Decoutere, S and Mertens, RP and Borghs, G}, title={Si Trench Around Drain (STAD) technology of GaN-DHFETs on si substrate for boosting power performance}, booktitle={2011 IEEE International electron devices meeting (IEDM)}, year={2011}, pages={4}, publisher={IEEE}, address={New York, NY, USA}, }